Detector Filter Combination
OSI Optoelectronics
The Detector-Filter combination serie incorporates a filter with a photodiode to achieve a tailored spectral response.
Radiometric response: PIN-10DF optimized to achieve flat responsivity from 450 to 950 nm
1cm² active area with BNC package
Photopic response: Optimized with filter which duplicate the human eye CIE curve to within 4% of area.
Main Features:
Photopic response: Optimized with filter which duplicate the human eye CIE curve to within 4% of area.
Main Features:
- CIE Match
- Flat band response
- Responsivity at 254nm: 0.14A/W typ
- 254nm narrow bandpass
- with amplifier hybryd
- BNC Package
- Spectroradiometry
- Medical instrumentation
- Liquid chromatography
Applications:
- Analytical chemistry
- Spectrophotmetry
- Densitometry
Photodiode with Integrated Amplifier
OSI Optoelectronics
The PHOTOPTM serie combine a photodiode with an operational amplifier in the same package.
The spectral range from either 350nm to 1100 nm or 200nm to 1100nm.
They have an integrated package ensuring low noise output under a variety of operating conditions. These op-amps are specifically selected by OSI Optoelectronics engineers for compatibility to our photodiodes.
Main Features:
Main Features:
- Detector/Amplifier combined
- Spectral response:200nm - 1100nm
- Adjustable gain/Bandwidth
- Large active area
- DIP Package- TO5 - TO8
- Industrial control sensors
- Fluorescence
- Colorimeter
- Pollution Monitoring
Applications:
- General purpose detection light
- Laser power monitoring
- Laser communication
UV Enhanced Si Photodiode
OSI Optoelectronics
OSI offers two distinct families of UV enhanced silicon photodiodes: Inverted channer serie and Planar diffused.
Inverted channer serie: UV enhanced photodiode exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements.
Planar diffused structure(UV-D series): show significant advantages over inversion layer devices, such as lower capacitance and higher response time.
Planar diffused structure(UV-D series): show significant advantages over inversion layer devices, such as lower capacitance and higher response time.
Main Features:
- Active Area : 0.8 - 100mm²
- Responsivity at 254nm : 0.14A/W typ
- IR Suppressed
- High Speed response
- Package : TO5 - TO8 - BNC - Plastic - Ceramic
Applications:
- Pollution Monitoring
- Medical Instrumentation
- UV exposure
- Spectroscopy
- Fluorescence
Photonics 
